Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / 1C5819.T
Manufacturer Part Number | 1C5819.T |
---|---|
Future Part Number | FT-1C5819.T |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
1C5819.T Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Type | Schottky |
Voltage - DC Reverse (Vr) (Max) | 20V |
Current - Average Rectified (Io) | 1A |
Voltage - Forward (Vf) (Max) @ If | 450mV @ 1A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | - |
Current - Reverse Leakage @ Vr | 50µA @ 20V |
Capacitance @ Vr, F | 110pF @ 5V, 1MHz |
Mounting Type | Surface Mount |
Package / Case | Die |
Supplier Device Package | Die |
Operating Temperature - Junction | -55°C ~ 125°C |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
1C5819.T Weight | Contact Us |
Replacement Part Number | 1C5819.T-FT |
CD1607-B140LF
Bourns Inc.
CD1408-FU1400
Bourns Inc.
CD1408-R11000
Bourns Inc.
CD1408-F1400
Bourns Inc.
CD1408-FF11000
Bourns Inc.
CD1408-FU1800
Bourns Inc.
CD1408-F11000
Bourns Inc.
CD1408-F1200
Bourns Inc.
CD1408-F1600
Bourns Inc.
CD1408-F1800
Bourns Inc.
A3P400-1FG484I
Microsemi Corporation
M1A3P1000-FGG256
Microsemi Corporation
10M50DCF256C7G
Intel
5SGXEA7N2F40C2N
Intel
EP3SE260H780I3
Intel
XC7V585T-1FF1761I
Xilinx Inc.
M1A3P1000L-1FGG144I
Microsemi Corporation
LFE2-20E-7FN256C
Lattice Semiconductor Corporation
EP3C25F324C6
Intel
5SGXEA3H1F35C2N
Intel