Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / 1N4150_T50R
Manufacturer Part Number | 1N4150_T50R |
---|---|
Future Part Number | FT-1N4150_T50R |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
1N4150_T50R Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 50V |
Current - Average Rectified (Io) | 200mA |
Voltage - Forward (Vf) (Max) @ If | 1V @ 200mA |
Speed | Small Signal =< 200mA (Io), Any Speed |
Reverse Recovery Time (trr) | 6ns |
Current - Reverse Leakage @ Vr | 100nA @ 50V |
Capacitance @ Vr, F | 2.5pF @ 0V, 1MHz |
Mounting Type | Through Hole |
Package / Case | DO-204AH, DO-35, Axial |
Supplier Device Package | DO-35 |
Operating Temperature - Junction | 175°C (Max) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
1N4150_T50R Weight | Contact Us |
Replacement Part Number | 1N4150_T50R-FT |
IDL10G65C5XUMA2
Infineon Technologies
IDL12G65C5XUMA2
Infineon Technologies
IDL02G65C5XUMA1
Infineon Technologies
IDL04G65C5XUMA1
Infineon Technologies
IDL06G65C5XUMA1
Infineon Technologies
IDL08G65C5XUMA1
Infineon Technologies
IDL10G65C5XUMA1
Infineon Technologies
IDL12G65C5XUMA1
Infineon Technologies
GB01SLT12-214
GeneSiC Semiconductor
GAP3SLT33-214
GeneSiC Semiconductor
A1020B-2VQ80C
Microsemi Corporation
LFE3-17EA-6FTN256C
Lattice Semiconductor Corporation
LCMXO640E-5FTN256C
Lattice Semiconductor Corporation
A3PN250-Z2VQG100
Microsemi Corporation
EP2C50F484C6N
Intel
EP4SGX290KF40I4N
Intel
XC6VHX250T-2FFG1154I
Xilinx Inc.
10AX090S4F45E3SG
Intel
10AX115H3F34I2LG
Intel
EP3CLS200F780C8
Intel