Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / 1N6641US
Manufacturer Part Number | 1N6641US |
---|---|
Future Part Number | FT-1N6641US |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | * |
1N6641US Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Type | - |
Voltage - DC Reverse (Vr) (Max) | - |
Current - Average Rectified (Io) | - |
Voltage - Forward (Vf) (Max) @ If | - |
Speed | - |
Reverse Recovery Time (trr) | - |
Current - Reverse Leakage @ Vr | - |
Capacitance @ Vr, F | - |
Mounting Type | - |
Package / Case | - |
Supplier Device Package | - |
Operating Temperature - Junction | - |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
1N6641US Weight | Contact Us |
Replacement Part Number | 1N6641US-FT |
SS2H9HE3_A/I
Vishay Semiconductor Diodes Division
SS3H9HE3_B/H
Vishay Semiconductor Diodes Division
SS3H9HE3_B/I
Vishay Semiconductor Diodes Division
UES1305SM
Microsemi Corporation
UES1306
Microsemi Corporation
UES1306SM
Microsemi Corporation
V30DL45HM3_A/I
Vishay Semiconductor Diodes Division
V40DL45HM3_A/I
Vishay Semiconductor Diodes Division
VFT760-E3/4W
Vishay Semiconductor Diodes Division
VFT760-M3/4W
Vishay Semiconductor Diodes Division
A54SX16A-1TQ144I
Microsemi Corporation
XC7A75T-3FGG484E
Xilinx Inc.
M1A3P1000L-1FGG484I
Microsemi Corporation
APA1000-CQ352M
Microsemi Corporation
EP2C8F256C8N
Intel
5SGXEBBR1H43C2L
Intel
XC2V2000-4FFG896C
Xilinx Inc.
LCMXO256E-4M100C
Lattice Semiconductor Corporation
EP1S10F780C6
Intel
EP4SGX110HF35I3
Intel