Manufacturer Part Number | BD682T |
---|---|
Future Part Number | FT-BD682T |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
BD682T Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | PNP - Darlington |
Current - Collector (Ic) (Max) | 4A |
Voltage - Collector Emitter Breakdown (Max) | 100V |
Vce Saturation (Max) @ Ib, Ic | 2.5V @ 30mA, 1.5A |
Current - Collector Cutoff (Max) | 500µA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 1.5A, 3V |
Power - Max | 40W |
Frequency - Transition | - |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-225AA, TO-126-3 |
Supplier Device Package | TO-225AA |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
BD682T Weight | Contact Us |
Replacement Part Number | BD682T-FT |
BD441G
ON Semiconductor
MJE800G
ON Semiconductor
BD675AG
ON Semiconductor
BD237G
ON Semiconductor
MJE702G
ON Semiconductor
MJE344G
ON Semiconductor
MJE803G
ON Semiconductor
BD437TG
ON Semiconductor
MJE200G
ON Semiconductor
2N4918G
ON Semiconductor
M2GL050T-FCSG325
Microsemi Corporation
A42MX36-1CQ256
Microsemi Corporation
5SGXEA3K1F40C2N
Intel
EP4SE360H29C3N
Intel
10AX032E3F27E2LG
Intel
10AX022E4F29I3LG
Intel
XA7A35T-1CPG236Q
Xilinx Inc.
LCMXO2-2000ZE-2FTG256I
Lattice Semiconductor Corporation
EP3SE110F780C2N
Intel
EP3SL110F780I4L
Intel