Manufacturer Part Number | BD912 |
---|---|
Future Part Number | FT-BD912 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
BD912 Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | PNP |
Current - Collector (Ic) (Max) | 15A |
Voltage - Collector Emitter Breakdown (Max) | 100V |
Vce Saturation (Max) @ Ib, Ic | 3V @ 2.5A, 10A |
Current - Collector Cutoff (Max) | 1mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 5A, 4V |
Power - Max | 90W |
Frequency - Transition | 3MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Supplier Device Package | TO-220AB |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
BD912 Weight | Contact Us |
Replacement Part Number | BD912-FT |
BUL138FP
STMicroelectronics
BUL310FP
STMicroelectronics
BUL49DFP
STMicroelectronics
BUL741FP
STMicroelectronics
D44H11FP
STMicroelectronics
ST8812FP
STMicroelectronics
ST901TFP
STMicroelectronics
STL128DNFP
STMicroelectronics
TIP122FP
STMicroelectronics
TIP127FP
STMicroelectronics
XA7A100T-1FGG484I
Xilinx Inc.
A3PE600-1FG484I
Microsemi Corporation
EP4CE10F17C8LN
Intel
5SGXEA4H2F35C1N
Intel
EP3SE110F1152C2N
Intel
XCS10XL-5PC84C
Xilinx Inc.
XC4VLX25-11FFG676I
Xilinx Inc.
M2GL060T-FGG676
Microsemi Corporation
LFE3-70E-6FN1156C
Lattice Semiconductor Corporation
EP1S60B956C7
Intel