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Infineon Technologies BSP299H6327XUSA1

Name: BSP299H6327XUSA1
Brand: Infineon Technologies
SKU: BSP299H6327XUSA1
Price: 0.533608 USD
Availability: InStock
Rating: 4.9 (69 reviews)

MFG Part Number: BSP299H6327XUSA1

Available Quantity: 94250 Pieces

Reference Price: USD 0.533608

Our Price: We have a big discount, please contact us

Shipping Date: We can ship out today

Manufacturer: Infineon Technologies

Brief Description: SIPMOS® MOSFET N-CH 500V 0.4A SOT-223

Lead Free Status / RoHS Status: RoHS Compliant (Lead Free)

Moisture Sensitivity Level (MSL): 1 (Unlimited)

Date Code (D/C): New

Product Category: Transistors - FETs, MOSFETs - Single

Stock Resource: Franchised Distributor

Warranty: 360 days quality guarantee

Datasheet: BSP299H6327XUSA1.pdf

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BSP299H6327XUSA1 Specifications

Manufacturer Part Number	BSP299H6327XUSA1
Future Part Number	FT-BSP299H6327XUSA1
SPQ / MOQ	Contact Us
Packing Material	Reel/Tray/Tube/Others
Series	SIPMOS®
BSP299H6327XUSA1 Status (Lifecycle)	In Stock
Part Status	Not For New Designs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25°C	400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	4 Ohm @ 400mA, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	400pF @ 25V
FET Feature	-
Power Dissipation (Max)	1.8W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-SOT223-4
Package / Case	TO-261-4, TO-261AA
Country of Origin	USA/JAPAN/MALAYSIA/MEXICO/CN
BSP299H6327XUSA1 Weight	Contact Us
Replacement Part Number	BSP299H6327XUSA1-FT

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