Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / DDTA142JE-7-F

| Manufacturer Part Number | DDTA142JE-7-F |
|---|---|
| Future Part Number | FT-DDTA142JE-7-F |
| SPQ / MOQ | Contact Us |
| Packing Material | Reel/Tray/Tube/Others |
| Series | - |
| DDTA142JE-7-F Status (Lifecycle) | In Stock |
| Part Status | Active |
| Transistor Type | PNP - Pre-Biased |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) | 470 Ohms |
| Resistor - Emitter Base (R2) | 10 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 56 @ 10mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 500nA |
| Frequency - Transition | 200MHz |
| Power - Max | 150mW |
| Mounting Type | Surface Mount |
| Package / Case | SOT-523 |
| Supplier Device Package | SOT-523 |
| Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
| DDTA142JE-7-F Weight | Contact Us |
| Replacement Part Number | DDTA142JE-7-F-FT |

BCR 199F E6327
Infineon Technologies

BCR 101T E6327
Infineon Technologies

BCR 103T E6327
Infineon Technologies

BCR 108T E6327
Infineon Technologies

BCR 112T E6327
Infineon Technologies

BCR 114T E6327
Infineon Technologies

BCR 116T E6327
Infineon Technologies

BCR 119T E6327
Infineon Technologies

BCR 129T E6327
Infineon Technologies

BCR 133T E6327
Infineon Technologies

A3P015-1QNG68
Microsemi Corporation

LFE2-6SE-6TN144C
Lattice Semiconductor Corporation

XC2VP30-5FGG676I
Xilinx Inc.

XC4013E-2PQ208C
Xilinx Inc.

AX250-FG484M
Microsemi Corporation

5SGXEA5N1F40C2LN
Intel

5SGXEA5K1F35C2LN
Intel

A3P1000L-FGG144
Microsemi Corporation

A3P400-FGG144
Microsemi Corporation

LFE3-95EA-9FN672C
Lattice Semiconductor Corporation