Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / DTC015TMT2L
Manufacturer Part Number | DTC015TMT2L |
---|---|
Future Part Number | FT-DTC015TMT2L |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
DTC015TMT2L Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 100 kOhms |
Resistor - Emitter Base (R2) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 500nA (ICBO) |
Frequency - Transition | 250MHz |
Power - Max | 150mW |
Mounting Type | Surface Mount |
Package / Case | SOT-723 |
Supplier Device Package | VMT3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
DTC015TMT2L Weight | Contact Us |
Replacement Part Number | DTC015TMT2L-FT |
RN1103ACT(TPL3)
Toshiba Semiconductor and Storage
RN1103CT(TPL3)
Toshiba Semiconductor and Storage
RN1104ACT(TPL3)
Toshiba Semiconductor and Storage
RN1104CT(TPL3)
Toshiba Semiconductor and Storage
RN1105ACT(TPL3)
Toshiba Semiconductor and Storage
RN1105CT(TPL3)
Toshiba Semiconductor and Storage
RN1106ACT(TPL3)
Toshiba Semiconductor and Storage
RN1106CT(TPL3)
Toshiba Semiconductor and Storage
RN1107ACT(TPL3)
Toshiba Semiconductor and Storage
RN1107CT(TPL3)
Toshiba Semiconductor and Storage
XC6SLX45-N3FGG676I
Xilinx Inc.
XC4010E-2BG225I
Xilinx Inc.
XC2S200E-6FG456C
Xilinx Inc.
LFE5UM-25F-7BG381I
Lattice Semiconductor Corporation
EP3SL340F1760I4N
Intel
A54SX32A-1BGG329I
Microsemi Corporation
LFEC15E-3FN256I
Lattice Semiconductor Corporation
LCMXO2-4000ZE-2BG332C
Lattice Semiconductor Corporation
10AX066H1F34E1SG
Intel
5AGXBB3D4F31C4N
Intel