Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / EMF21T2R
Manufacturer Part Number | EMF21T2R |
---|---|
Future Part Number | FT-EMF21T2R |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
EMF21T2R Status (Lifecycle) | In Stock |
Part Status | Not For New Designs |
Transistor Type | 1 NPN Pre-Biased, 1 PNP |
Current - Collector (Ic) (Max) | 100mA, 500mA |
Voltage - Collector Emitter Breakdown (Max) | 50V, 12V |
Resistor - Base (R1) | 10 kOhms |
Resistor - Emitter Base (R2) | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V / 270 @ 10mA, 2V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 250MHz, 260MHz |
Power - Max | 150mW |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | EMT6 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
EMF21T2R Weight | Contact Us |
Replacement Part Number | EMF21T2R-FT |
RN2904,LF
Toshiba Semiconductor and Storage
RN2905,LF(CT
Toshiba Semiconductor and Storage
RN2906(T5L,F,T)
Toshiba Semiconductor and Storage
RN2907(T5L,F,T)
Toshiba Semiconductor and Storage
RN2908(T5L,F,T)
Toshiba Semiconductor and Storage
RN2909(T5L,F,T)
Toshiba Semiconductor and Storage
RN2910(T5L,F,T)
Toshiba Semiconductor and Storage
RN2911(T5L,F,T)
Toshiba Semiconductor and Storage
RN4901(T5L,F,T)
Toshiba Semiconductor and Storage
RN4901,LF
Toshiba Semiconductor and Storage
LCMXO2-4000HE-4TG144I
Lattice Semiconductor Corporation
XC3S1200E-4FT256C
Xilinx Inc.
XCV400-5FG676C
Xilinx Inc.
XC7A50T-1CSG325C
Xilinx Inc.
M1A3P1000-FG256
Microsemi Corporation
EP4SE360H29C2N
Intel
5SGSMD8N3F45C2N
Intel
5SGXMA7H1F35C2LN
Intel
XC7K420T-3FFG1156E
Xilinx Inc.
LFX125EB-05F256C
Lattice Semiconductor Corporation