EPC EPC2012
- MFG Part Number
- EPC2012
- Available Quantity
- 63880 Pieces
- Reference Price
- USD 0
- Our Price
- We have a big discount, please contact us
- Shipping Date
- We can ship out today
- Manufacturer
- EPC
- Brief Description
- eGaN® GANFET TRANS 200V 3A BUMPED DIE
- Lead Free Status / RoHS Status
- RoHS Compliant (Lead Free)
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Date Code (D/C)
- New
- Product Category
- Transistors - FETs, MOSFETs - Single
- Stock Resource
- Franchised Distributor
- Warranty
- 360 days quality guarantee
- Datasheet
- EPC2012.pdf
EPC2012 Specifications
| Manufacturer Part Number | EPC2012 |
|---|---|
| Future Part Number | FT-EPC2012 |
| SPQ / MOQ | Contact Us |
| Packing Material | Reel/Tray/Tube/Others |
| Series | eGaN® |
| EPC2012 Status (Lifecycle) | In Stock |
| Part Status | Discontinued at Future Semiconductor |
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Rds On (Max) @ Id, Vgs | 100 mOhm @ 3A, 5V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 1.8nC @ 5V |
| Vgs (Max) | +6V, -5V |
| Input Capacitance (Ciss) (Max) @ Vds | 145pF @ 100V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Operating Temperature | -40°C ~ 125°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | Die |
| Package / Case | Die |
| Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
| EPC2012 Weight | Contact Us |
| Replacement Part Number | EPC2012-FT |
How To Order?
Request for Quotation - Confirm Price - Order - Payment - Shipment - DoneShipping Methods
1) DHL (1-3 days)2) FEDEX (1-3 days)
3) UPS (1-3 days)
4) TNT (2-5 days)
5) EMS (7-10 days)
6) Normal Post (10-20 days)
7) Others
Freight Calculation: Please contact us
How to Contact?
Our Email: [email protected]Payment Methods
1) Bank Transfer (Wire Transfer)2) Paypal (Credit Card)
3) Western Union
4) MoneyGram
5) Others
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