Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / FQB50N06TM
Manufacturer Part Number | FQB50N06TM |
---|---|
Future Part Number | FT-FQB50N06TM |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | QFET® |
FQB50N06TM Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 22 mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 41nC @ 10V |
Vgs (Max) | ±25V |
Input Capacitance (Ciss) (Max) @ Vds | 1540pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 3.75W (Ta), 120W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D²PAK (TO-263AB) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
FQB50N06TM Weight | Contact Us |
Replacement Part Number | FQB50N06TM-FT |
FDB047N10
ON Semiconductor
FQB22P10TM
ON Semiconductor
FQB55N10TM
ON Semiconductor
FDB13AN06A0
ON Semiconductor
FDB2614
ON Semiconductor
FDB8447L
ON Semiconductor
FQB12P20TM
ON Semiconductor
FQB19N20TM
ON Semiconductor
FQB1P50TM
ON Semiconductor
FQB34P10TM
ON Semiconductor
XCVU095-2FFVD1517I
Xilinx Inc.
AGL1000V2-FG256T
Microsemi Corporation
A42MX24-2PQ208I
Microsemi Corporation
ICE5LP4K-SWG36ITR
Lattice Semiconductor Corporation
A42MX09-1VQ100
Microsemi Corporation
10CL016YU256I7G
Intel
EP3C10F256I7
Intel
LCMXO2-7000HE-6FTG256C
Lattice Semiconductor Corporation
10AX066K1F35E1SG
Intel
EP2AGX65CU17C4
Intel