Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / GB10SLT12-220
Manufacturer Part Number | GB10SLT12-220 |
---|---|
Future Part Number | FT-GB10SLT12-220 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
GB10SLT12-220 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Diode Type | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max) | 1200V |
Current - Average Rectified (Io) | 10A |
Voltage - Forward (Vf) (Max) @ If | 1.8V @ 10A |
Speed | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr) | 0ns |
Current - Reverse Leakage @ Vr | 40µA @ 1200V |
Capacitance @ Vr, F | 520pF @ 1V, 1MHz |
Mounting Type | Through Hole |
Package / Case | TO-220-2 |
Supplier Device Package | TO-220AC |
Operating Temperature - Junction | -55°C ~ 175°C |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
GB10SLT12-220 Weight | Contact Us |
Replacement Part Number | GB10SLT12-220-FT |
MBRH20045
GeneSiC Semiconductor
MBRH12040R
GeneSiC Semiconductor
MBRH120100
GeneSiC Semiconductor
MBRH120100R
GeneSiC Semiconductor
MBRH120150
GeneSiC Semiconductor
MBRH120150R
GeneSiC Semiconductor
MBRH12020
GeneSiC Semiconductor
MBRH120200
GeneSiC Semiconductor
MBRH120200R
GeneSiC Semiconductor
MBRH12020R
GeneSiC Semiconductor
A1020B-2VQ80C
Microsemi Corporation
LFE3-17EA-6FTN256C
Lattice Semiconductor Corporation
LCMXO640E-5FTN256C
Lattice Semiconductor Corporation
A3PN250-Z2VQG100
Microsemi Corporation
EP2C50F484C6N
Intel
EP4SGX290KF40I4N
Intel
XC6VHX250T-2FFG1154I
Xilinx Inc.
10AX090S4F45E3SG
Intel
10AX115H3F34I2LG
Intel
EP3CLS200F780C8
Intel