Home / Products / Discrete Semiconductor Products / Diodes - Bridge Rectifiers / GBJ610TB
Manufacturer Part Number | GBJ610TB |
---|---|
Future Part Number | FT-GBJ610TB |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
GBJ610TB Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Type | Single Phase |
Technology | Standard |
Voltage - Peak Reverse (Max) | 1kV |
Current - Average Rectified (Io) | 6A |
Voltage - Forward (Vf) (Max) @ If | 1.1V @ 6A |
Current - Reverse Leakage @ Vr | 5µA @ 1000V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | 4-ESIP |
Supplier Device Package | GBJ |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
GBJ610TB Weight | Contact Us |
Replacement Part Number | GBJ610TB-FT |
MBS4HRCG
Taiwan Semiconductor Corporation
RMB4S RCG
Taiwan Semiconductor Corporation
RMB4SHRCG
Taiwan Semiconductor Corporation
RMB6SHRCG
Taiwan Semiconductor Corporation
MBS10HRCG
Taiwan Semiconductor Corporation
MBS2 RCG
Taiwan Semiconductor Corporation
MBS6 RCG
Taiwan Semiconductor Corporation
MBS6HRCG
Taiwan Semiconductor Corporation
MBS8HRCG
Taiwan Semiconductor Corporation
GBU607 D2G
Taiwan Semiconductor Corporation
AT6002A-2AC
Microchip Technology
XC2VP30-6FG676I
Xilinx Inc.
A54SX72A-FGG256I
Microsemi Corporation
MPF300TL-FCG484E
Microsemi Corporation
5AGXMA7D4F27C5N
Intel
LFE2M35SE-6F484I
Lattice Semiconductor Corporation
LFE2-12E-5F484C
Lattice Semiconductor Corporation
EP3C40F324C6N
Intel
EPF10K30RI208-4
Intel
EP4SGX290FF35I3
Intel