Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / GP1M009A090N
Manufacturer Part Number | GP1M009A090N |
---|---|
Future Part Number | FT-GP1M009A090N |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
GP1M009A090N Status (Lifecycle) | In Stock |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 900V |
Current - Continuous Drain (Id) @ 25°C | 9.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 1.4 Ohm @ 4.75A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 65nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 2324pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 312W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-3PN |
Package / Case | TO-3P-3, SC-65-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
GP1M009A090N Weight | Contact Us |
Replacement Part Number | GP1M009A090N-FT |
AUIRLU024Z
Infineon Technologies
IRFU1010Z
Infineon Technologies
IRFU1010ZPBF
Infineon Technologies
IRFU1018EPBF
Infineon Technologies
IRFU1205
Infineon Technologies
IRFU120Z
Infineon Technologies
IRFU120ZPBF
Infineon Technologies
IRFU12N25D
Infineon Technologies
IRFU12N25DPBF
Infineon Technologies
IRFU13N15D
Infineon Technologies
XC2VP4-6FGG256C
Xilinx Inc.
XC4052XL-3HQ304C
Xilinx Inc.
XC2V250-6FGG456C
Xilinx Inc.
M1A3P600-1FGG484
Microsemi Corporation
A42MX36-PQ208I
Microsemi Corporation
M2GL090TS-1FGG676I
Microsemi Corporation
LFEC10E-4QN208I
Lattice Semiconductor Corporation
EP1K100QC208-3N
Intel
EP4SGX180FF35C2XN
Intel
EP1SGX25DF1020C6
Intel