Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / GS1DE-TP
Manufacturer Part Number | GS1DE-TP |
---|---|
Future Part Number | FT-GS1DE-TP |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
GS1DE-TP Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 200V |
Current - Average Rectified (Io) | 1A |
Voltage - Forward (Vf) (Max) @ If | - |
Speed | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 2µs |
Current - Reverse Leakage @ Vr | 5µA @ 200V |
Capacitance @ Vr, F | 15pF @ 4V, 1MHz |
Mounting Type | Surface Mount |
Package / Case | DO-214AC, SMA |
Supplier Device Package | DO-214AC (SMAE) |
Operating Temperature - Junction | -55°C ~ 150°C |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
GS1DE-TP Weight | Contact Us |
Replacement Part Number | GS1DE-TP-FT |
GKR26/08
GeneSiC Semiconductor
GKR26/12
GeneSiC Semiconductor
GKR26/16
GeneSiC Semiconductor
GL34A-E3/83
Vishay Semiconductor Diodes Division
GL34A-TP
Micro Commercial Co
GL34B-TP
Micro Commercial Co
GL34D-TP
Micro Commercial Co
GL34G-TP
Micro Commercial Co
GL34J-TP
Micro Commercial Co
GL34K-TP
Micro Commercial Co
XCV1000E-6FG900I
Xilinx Inc.
A54SX72A-PQG208
Microsemi Corporation
AGL250V2-VQG100I
Microsemi Corporation
EP4SGX290NF45C2
Intel
5SGXEB6R2F43I2LN
Intel
5SGSMD5H3F35C2N
Intel
LFE2M50SE-5FN484C
Lattice Semiconductor Corporation
LFE2M20SE-5F484C
Lattice Semiconductor Corporation
EP20K1000CB652C7
Intel
5SGSMD3H2F35I2LN
Intel