Home / Products / Discrete Semiconductor Products / Diodes - RF / HSMS-8209-TR2G

            | Manufacturer Part Number | HSMS-8209-TR2G | 
|---|---|
| Future Part Number | FT-HSMS-8209-TR2G | 
| SPQ / MOQ | Contact Us | 
| Packing Material | Reel/Tray/Tube/Others | 
| Series | - | 
| HSMS-8209-TR2G Status (Lifecycle) | In Stock | 
| Part Status | Obsolete | 
| Diode Type | Schottky - Cross Over | 
| Voltage - Peak Reverse (Max) | 4V | 
| Current - Max | - | 
| Capacitance @ Vr, F | 0.26pF @ 0V, 1MHz | 
| Resistance @ If, F | 14 Ohm @ 5mA, 1MHz | 
| Power Dissipation (Max) | 75mW | 
| Operating Temperature | 150°C (TJ) | 
| Package / Case | TO-253-4, TO-253AA | 
| Supplier Device Package | SOT-143-4 | 
| Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN | 
| HSMS-8209-TR2G Weight | Contact Us | 
| Replacement Part Number | HSMS-8209-TR2G-FT | 

BAR 88-02V E6127
Infineon Technologies

BAR 88-02V E6327
Infineon Technologies

BAT 63-02V E6327
Infineon Technologies

BAR6303WE6327HTSA1
Infineon Technologies

BA592E6327HTSA1
Infineon Technologies

BAR6403WE6327HTSA1
Infineon Technologies

BAR6503WE6327HTSA1
Infineon Technologies

BAT1503WE6327HTSA1
Infineon Technologies

BA 595 B6327
Infineon Technologies

BA592E6433HTMA1
Infineon Technologies

M2GL025TS-FCSG325
Microsemi Corporation

AGLN030V2-ZCSG81I
Microsemi Corporation

M2GL010-1FG484
Microsemi Corporation

LFE5UM-45F-7BG554I
Lattice Semiconductor Corporation

EP4S40G2F40I3N
Intel

5SGXEB6R3F43I3L
Intel

A40MX02-1PQ100I
Microsemi Corporation

LFE2M100E-6F900I
Lattice Semiconductor Corporation

LFE2-6E-7FN256C
Lattice Semiconductor Corporation

EP3SE50F780C3
Intel