Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / JANTXV2N6351
Manufacturer Part Number | JANTXV2N6351 |
---|---|
Future Part Number | FT-JANTXV2N6351 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Military, MIL-PRF-19500/472 |
JANTXV2N6351 Status (Lifecycle) | In Stock |
Part Status | Discontinued at Future Semiconductor |
Transistor Type | NPN - Darlington |
Current - Collector (Ic) (Max) | 5A |
Voltage - Collector Emitter Breakdown (Max) | 150V |
Vce Saturation (Max) @ Ib, Ic | 2.5V @ 10mA, 5A |
Current - Collector Cutoff (Max) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 5A, 5V |
Power - Max | 1W |
Frequency - Transition | - |
Operating Temperature | -65°C ~ 200°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-205AC, TO-33-4 Metal Can |
Supplier Device Package | TO-33 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
JANTXV2N6351 Weight | Contact Us |
Replacement Part Number | JANTXV2N6351-FT |
JANTX2N5416UA
Microsemi Corporation
JANTX2N5660
Microsemi Corporation
JANTX2N5661
Microsemi Corporation
JANTX2N5662
Microsemi Corporation
JANTX2N5666S
Microsemi Corporation
JANTX2N5667S
Microsemi Corporation
JANTX2N5672
Microsemi Corporation
JANTX2N5684
Microsemi Corporation
JANTX2N5685
Microsemi Corporation
JANTX2N5686
Microsemi Corporation
M2GL050T-FCSG325
Microsemi Corporation
A42MX36-1CQ256
Microsemi Corporation
5SGXEA3K1F40C2N
Intel
EP4SE360H29C3N
Intel
10AX032E3F27E2LG
Intel
10AX022E4F29I3LG
Intel
XA7A35T-1CPG236Q
Xilinx Inc.
LCMXO2-2000ZE-2FTG256I
Lattice Semiconductor Corporation
EP3SE110F780C2N
Intel
EP3SL110F780I4L
Intel