Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / MUN5116T1G
Manufacturer Part Number | MUN5116T1G |
---|---|
Future Part Number | FT-MUN5116T1G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
MUN5116T1G Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 4.7 kOhms |
Resistor - Emitter Base (R2) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 202mW |
Mounting Type | Surface Mount |
Package / Case | SC-70, SOT-323 |
Supplier Device Package | SC-70-3 (SOT323) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
MUN5116T1G Weight | Contact Us |
Replacement Part Number | MUN5116T1G-FT |
MUN2241T1
ON Semiconductor
NSBA143ZF3T5G
ON Semiconductor
NSBC115TF3T5G
ON Semiconductor
NSBA113EF3T5G
ON Semiconductor
NSBA114EF3T5G
ON Semiconductor
NSBC114TF3T5G
ON Semiconductor
NSBC143EF3T5G
ON Semiconductor
NSBA144EF3T5G
ON Semiconductor
NSBC144EF3T5G
ON Semiconductor
NSBA114YF3T5G
ON Semiconductor
M1A3P400-FGG484I
Microsemi Corporation
MPF300TL-FCVG484E
Microsemi Corporation
A54SX16P-1VQ100I
Microsemi Corporation
5SGXEB5R1F40C2L
Intel
XC7VX330T-3FFG1157E
Xilinx Inc.
A42MX24-PQ160
Microsemi Corporation
LCMXO2-2000HE-6FTG256C
Lattice Semiconductor Corporation
LFE3-150EA-6FN672C
Lattice Semiconductor Corporation
EP20K200RC240-1X
Intel
5SGXMA3H2F35C3N
Intel