Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF / NE85634-A
Manufacturer Part Number | NE85634-A |
---|---|
Future Part Number | FT-NE85634-A |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
NE85634-A Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 12V |
Frequency - Transition | 6.5GHz |
Noise Figure (dB Typ @ f) | 1.1dB @ 1GHz |
Gain | 9dB |
Power - Max | 2W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 20mA, 10V |
Current - Collector (Ic) (Max) | 100mA |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-243AA |
Supplier Device Package | SOT-89 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
NE85634-A Weight | Contact Us |
Replacement Part Number | NE85634-A-FT |
MMBTH10-7-F
Diodes Incorporated
BFQ31ATA
Diodes Incorporated
BFQ31ATC
Diodes Incorporated
BFS17HTA
Diodes Incorporated
BFS17HTC
Diodes Incorporated
BFS17TA
Diodes Incorporated
FMMT5179TA
Diodes Incorporated
FMMT5179TC
Diodes Incorporated
FMMT918TA
Diodes Incorporated
FMMT918TC
Diodes Incorporated
EPF10K30ETC144-2N
Intel
LCMXO640C-5TN100C
Lattice Semiconductor Corporation
LFE2-20SE-6QN208C
Lattice Semiconductor Corporation
M1AGL600V5-FGG484I
Microsemi Corporation
M1A3P250-1VQ100
Microsemi Corporation
5CGXBC9D7F27C8N
Intel
EP2C50F672C6N
Intel
5SGXEA7H2F35C3N
Intel
LCMXO2-2000ZE-3BG256I
Lattice Semiconductor Corporation
LFE3-35EA-6FN484C
Lattice Semiconductor Corporation