Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / NSB1706DMW5T1
Manufacturer Part Number | NSB1706DMW5T1 |
---|---|
Future Part Number | FT-NSB1706DMW5T1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
NSB1706DMW5T1 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 4.7 kOhms |
Resistor - Emitter Base (R2) | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 250mW |
Mounting Type | Surface Mount |
Package / Case | 5-TSSOP, SC-70-5, SOT-353 |
Supplier Device Package | SC-88A (SC-70-5/SOT-353) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
NSB1706DMW5T1 Weight | Contact Us |
Replacement Part Number | NSB1706DMW5T1-FT |
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