Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / NSBC123EPDXV6T1G

| Manufacturer Part Number | NSBC123EPDXV6T1G |
|---|---|
| Future Part Number | FT-NSBC123EPDXV6T1G |
| SPQ / MOQ | Contact Us |
| Packing Material | Reel/Tray/Tube/Others |
| Series | - |
| NSBC123EPDXV6T1G Status (Lifecycle) | In Stock |
| Part Status | Obsolete |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 2.2 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 8 @ 5mA, 10V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| Frequency - Transition | - |
| Power - Max | 500mW |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Supplier Device Package | SOT-563 |
| Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
| NSBC123EPDXV6T1G Weight | Contact Us |
| Replacement Part Number | NSBC123EPDXV6T1G-FT |

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