Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / NSTB1002DXV5T1
Manufacturer Part Number | NSTB1002DXV5T1 |
---|---|
Future Part Number | FT-NSTB1002DXV5T1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
NSTB1002DXV5T1 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | 1 NPN Pre-Biased, 1 PNP |
Current - Collector (Ic) (Max) | 100mA, 200mA |
Voltage - Collector Emitter Breakdown (Max) | 50V, 40V |
Resistor - Base (R1) | 47 kOhms |
Resistor - Emitter Base (R2) | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V / 100 @ 1mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA / 400mV @ 5mA, 50mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 250MHz |
Power - Max | 500mW |
Mounting Type | Surface Mount |
Package / Case | SOT-553 |
Supplier Device Package | SOT-553 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
NSTB1002DXV5T1 Weight | Contact Us |
Replacement Part Number | NSTB1002DXV5T1-FT |
NSBA115EDXV6T1G
ON Semiconductor
NSBC123EDXV6T1G
ON Semiconductor
NSBA114EDXV6T1G
ON Semiconductor
NSBA124EDXV6T1G
ON Semiconductor
NSBC114EDXV6T1G
ON Semiconductor
NSBC114EPDXV6T1G
ON Semiconductor
NSBC114EDXV6T5G
ON Semiconductor
NSBC124EDXV6T5G
ON Semiconductor
NSBC113EPDXV6T1G
ON Semiconductor
NSVBC143ZPDXV6T1G
ON Semiconductor
A1010B-2VQ80I
Microsemi Corporation
AGLN030V5-ZQNG48
Microsemi Corporation
EP4SGX530NF45I4
Intel
5AGZME5H3F35C4N
Intel
5SGXEA5K2F35I3LN
Intel
5SGXMA3K3F35C2N
Intel
XC7K480T-1FFG901I
Xilinx Inc.
XC7A200T-1FFG1156I
Xilinx Inc.
A42MX16-3PL84
Microsemi Corporation
M1AFS1500-FGG676I
Microsemi Corporation