Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / RN2902FE(T5L,F,T)

| Manufacturer Part Number | RN2902FE(T5L,F,T) |
|---|---|
| Future Part Number | FT-RN2902FE(T5L,F,T) |
| SPQ / MOQ | Contact Us |
| Packing Material | Reel/Tray/Tube/Others |
| Series | - |
| RN2902FE(T5L,F,T) Status (Lifecycle) | In Stock |
| Part Status | Obsolete |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Frequency - Transition | 200MHz |
| Power - Max | 100mW |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Supplier Device Package | ES6 |
| Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
| RN2902FE(T5L,F,T) Weight | Contact Us |
| Replacement Part Number | RN2902FE(T5L,F,T)-FT |

RN4607(TE85L,F)
Toshiba Semiconductor and Storage

RN4608(TE85L,F)
Toshiba Semiconductor and Storage

RN4609(TE85L,F)
Toshiba Semiconductor and Storage

RN4602TE85LF
Toshiba Semiconductor and Storage

IMB2AT110
Rohm Semiconductor

IMB3AT110
Rohm Semiconductor

IMD2AT108
Rohm Semiconductor

IMD3AT108
Rohm Semiconductor

IMD6AT108
Rohm Semiconductor

IMD9AT108
Rohm Semiconductor

LCMXO2-2000HE-5TG100C
Lattice Semiconductor Corporation

A3PE3000L-FG484I
Microsemi Corporation

A54SX32A-1FG256
Microsemi Corporation

5AGXMA3D4F27C5N
Intel

5SGXEABN3F45C2L
Intel

5SGXEA7K2F35I3LN
Intel

EP3SE110F1152I4LN
Intel

LFE2M50E-6FN484C
Lattice Semiconductor Corporation

EP2AGX190FF35C4
Intel

EP1K100QC208-3N
Intel