Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SI8816EDB-T2-E1

| Manufacturer Part Number | SI8816EDB-T2-E1 |
|---|---|
| Future Part Number | FT-SI8816EDB-T2-E1 |
| SPQ / MOQ | Contact Us |
| Packing Material | Reel/Tray/Tube/Others |
| Series | TrenchFET® |
| SI8816EDB-T2-E1 Status (Lifecycle) | In Stock |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | - |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
| Rds On (Max) @ Id, Vgs | 109 mOhm @ 1A, 10V |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 8nC @ 10V |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 195pF @ 15V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 4-Microfoot |
| Package / Case | 4-XFBGA |
| Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
| SI8816EDB-T2-E1 Weight | Contact Us |
| Replacement Part Number | SI8816EDB-T2-E1-FT |

SIDR622DP-T1-GE3
Vishay Siliconix

SIDR638DP-T1-GE3
Vishay Siliconix

SQS407ENW-T1_GE3
Vishay Siliconix

SQS411ENW-T1_GE3
Vishay Siliconix

SQS415ENW-T1_GE3
Vishay Siliconix

SQS460ENW-T1_GE3
Vishay Siliconix

SQS482ENW-T1_GE3
Vishay Siliconix

SQJ457EP-T1_GE3
Vishay Siliconix

SQJ431EP-T1_GE3
Vishay Siliconix

SQJA86EP-T1_GE3
Vishay Siliconix

EX64-TQ100I
Microsemi Corporation

M2GL090T-FCSG325I
Microsemi Corporation

M1AFS600-2FG256I
Microsemi Corporation

5SGXMA7N2F40I3N
Intel

XCS05-3PC84C
Xilinx Inc.

XC2V4000-5FFG1152I
Xilinx Inc.

AGL600V5-FGG144
Microsemi Corporation

EP3SL150F780C4LN
Intel

EPF10K30RC240-4N
Intel

EP1S60F1020C5N
Intel