Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SI8817DB-T2-E1

| Manufacturer Part Number | SI8817DB-T2-E1 |
|---|---|
| Future Part Number | FT-SI8817DB-T2-E1 |
| SPQ / MOQ | Contact Us |
| Packing Material | Reel/Tray/Tube/Others |
| Series | TrenchFET® |
| SI8817DB-T2-E1 Status (Lifecycle) | In Stock |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | - |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 76 mOhm @ 1A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 19nC @ 8V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 615pF @ 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 4-Microfoot |
| Package / Case | 4-XFBGA |
| Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
| SI8817DB-T2-E1 Weight | Contact Us |
| Replacement Part Number | SI8817DB-T2-E1-FT |

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