Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SIHG40N60E-GE3

| Manufacturer Part Number | SIHG40N60E-GE3 |
|---|---|
| Future Part Number | FT-SIHG40N60E-GE3 |
| SPQ / MOQ | Contact Us |
| Packing Material | Reel/Tray/Tube/Others |
| Series | E |
| SIHG40N60E-GE3 Status (Lifecycle) | In Stock |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 75 mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 197nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 4436pF @ 100V |
| FET Feature | - |
| Power Dissipation (Max) | 329W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247AC |
| Package / Case | TO-247-3 |
| Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
| SIHG40N60E-GE3 Weight | Contact Us |
| Replacement Part Number | SIHG40N60E-GE3-FT |

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