Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / SQ1912AEEH-T1_GE3
Manufacturer Part Number | SQ1912AEEH-T1_GE3 |
---|---|
Future Part Number | FT-SQ1912AEEH-T1_GE3 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Automotive, AEC-Q101, TrenchFET® |
SQ1912AEEH-T1_GE3 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | 2 N-Channel (Dual) |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 800mA (Tc) |
Rds On (Max) @ Id, Vgs | 280 mOhm @ 1.2A, 4.5V |
Vgs(th) (Max) @ Id | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 1.25nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 27pF @ 10V |
Power - Max | 1.5W |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | PowerPAK® SC-70-6 Dual |
Supplier Device Package | PowerPAK® SC-70-6 Dual |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
SQ1912AEEH-T1_GE3 Weight | Contact Us |
Replacement Part Number | SQ1912AEEH-T1_GE3-FT |
DMC25D0UVT-7
Diodes Incorporated
SI3585CDV-T1-GE3
Vishay Siliconix
DMC25D0UVT-13
Diodes Incorporated
DMC2038LVTQ-7
Diodes Incorporated
IRF5810
Infineon Technologies
IRF5810TR
Infineon Technologies
IRF5810TRPBF
Infineon Technologies
IRF5850
Infineon Technologies
IRF5850TR
Infineon Technologies
IRF5850TRPBF
Infineon Technologies
LCMXO2280E-3T100C
Lattice Semiconductor Corporation
XCV405E-6FG676I
Xilinx Inc.
XC4005-5PQ208C
Xilinx Inc.
A54SX16A-FG144M
Microsemi Corporation
10M16DAF484I7G
Intel
LFE2-50E-6FN672C
Lattice Semiconductor Corporation
10AX066H2F34E2SG
Intel
10AX032E1F29I1SG
Intel
EP20K100BC356-2
Intel
EPF10K100ABC356-2
Intel