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Vishay Siliconix SQ2309ES-T1_GE3

Name: SQ2309ES-T1_GE3
Brand: Vishay Siliconix
SKU: SQ2309ES-T1_GE3
Price: 0.192488 USD
Availability: InStock
Rating: 4.7 (215 reviews)

MFG Part Number: SQ2309ES-T1_GE3

Available Quantity: 15510 Pieces

Reference Price: USD 0.192488

Our Price: We have a big discount, please contact us

Shipping Date: We can ship out today

Manufacturer: Vishay Siliconix

Brief Description: Automotive, AEC-Q101, TrenchFET® MOSFET P-CHAN 60V SOT23

Lead Free Status / RoHS Status: RoHS Compliant (Lead Free)

Moisture Sensitivity Level (MSL): 1 (Unlimited)

Date Code (D/C): New

Product Category: Transistors - FETs, MOSFETs - Single

Stock Resource: Franchised Distributor

Warranty: 360 days quality guarantee

Datasheet: SQ2309ES-T1_GE3.pdf

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SQ2309ES-T1_GE3 Specifications

Manufacturer Part Number	SQ2309ES-T1_GE3
Future Part Number	FT-SQ2309ES-T1_GE3
SPQ / MOQ	Contact Us
Packing Material	Reel/Tray/Tube/Others
Series	Automotive, AEC-Q101, TrenchFET®
SQ2309ES-T1_GE3 Status (Lifecycle)	In Stock
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	336 mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8.5nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	265pF @ 25V
FET Feature	-
Power Dissipation (Max)	2W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-236 (SOT-23)
Package / Case	TO-236-3, SC-59, SOT-23-3
Country of Origin	USA/JAPAN/MALAYSIA/MEXICO/CN
SQ2309ES-T1_GE3 Weight	Contact Us
Replacement Part Number	SQ2309ES-T1_GE3-FT

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