Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / TK16C60W,S1VQ
Manufacturer Part Number | TK16C60W,S1VQ |
---|---|
Future Part Number | FT-TK16C60W,S1VQ |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | DTMOSIV |
TK16C60W,S1VQ Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 15.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 190 mOhm @ 7.9A, 10V |
Vgs(th) (Max) @ Id | 3.7V @ 790µA |
Gate Charge (Qg) (Max) @ Vgs | 38nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 1350pF @ 300V |
FET Feature | - |
Power Dissipation (Max) | 130W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I2PAK |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
TK16C60W,S1VQ Weight | Contact Us |
Replacement Part Number | TK16C60W,S1VQ-FT |
TK31E60W,S1VX
Toshiba Semiconductor and Storage
TK31E60X,S1X
Toshiba Semiconductor and Storage
TK35E08N1,S1X
Toshiba Semiconductor and Storage
TK42E12N1,S1X
Toshiba Semiconductor and Storage
TK46E08N1,S1X
Toshiba Semiconductor and Storage
TK56E12N1,S1X
Toshiba Semiconductor and Storage
TK72E12N1,S1X
Toshiba Semiconductor and Storage
TK13A60D(STA4,Q,M)
Toshiba Semiconductor and Storage
TK6A60D(STA4,Q,M)
Toshiba Semiconductor and Storage
TK72A08N1,S4X
Toshiba Semiconductor and Storage
XC3S50-4TQG144I
Xilinx Inc.
XC3S5000-4FGG676I
Xilinx Inc.
XC6SLX25-L1FG484I
Xilinx Inc.
A54SX16A-1FG256
Microsemi Corporation
MPF300T-1FCG1152E
Microsemi Corporation
AT6005LV-4AC
Microchip Technology
EP3SL200H780I4L
Intel
LFEC6E-3Q208I
Lattice Semiconductor Corporation
LFXP2-17E-6F484C
Lattice Semiconductor Corporation
10AX066K2F40E2LG
Intel