Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / VQ1001P-E3

| Manufacturer Part Number | VQ1001P-E3 |
|---|---|
| Future Part Number | FT-VQ1001P-E3 |
| SPQ / MOQ | Contact Us |
| Packing Material | Reel/Tray/Tube/Others |
| Series | - |
| VQ1001P-E3 Status (Lifecycle) | In Stock |
| Part Status | Obsolete |
| FET Type | 4 N-Channel |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 830mA |
| Rds On (Max) @ Id, Vgs | 1.75 Ohm @ 200mA, 5V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Input Capacitance (Ciss) (Max) @ Vds | 110pF @ 15V |
| Power - Max | 2W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | - |
| Supplier Device Package | 14-DIP |
| Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
| VQ1001P-E3 Weight | Contact Us |
| Replacement Part Number | VQ1001P-E3-FT |

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