Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / XBS013S16R-G
Manufacturer Part Number | XBS013S16R-G |
---|---|
Future Part Number | FT-XBS013S16R-G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
XBS013S16R-G Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Type | Schottky |
Voltage - DC Reverse (Vr) (Max) | 30V |
Current - Average Rectified (Io) | 100mA |
Voltage - Forward (Vf) (Max) @ If | 1V @ 100mA |
Speed | Small Signal =< 200mA (Io), Any Speed |
Reverse Recovery Time (trr) | 2ns |
Current - Reverse Leakage @ Vr | 2µA @ 25V |
Capacitance @ Vr, F | 6pF @ 0V, 1MHz |
Mounting Type | Surface Mount |
Package / Case | SOD-723 |
Supplier Device Package | SOD-723 |
Operating Temperature - Junction | 125°C (Max) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
XBS013S16R-G Weight | Contact Us |
Replacement Part Number | XBS013S16R-G-FT |
RGP20J-E3/73
Vishay Semiconductor Diodes Division
RGP20JHE3/54
Vishay Semiconductor Diodes Division
RGP20JHE3/73
Vishay Semiconductor Diodes Division
SUF15G-E3/54
Vishay Semiconductor Diodes Division
SUF15G-E3/73
Vishay Semiconductor Diodes Division
SUF15J-E3/54
Vishay Semiconductor Diodes Division
SUF15J-E3/73
Vishay Semiconductor Diodes Division
TBAT54,LM
Toshiba Semiconductor and Storage
1SS187,LF
Toshiba Semiconductor and Storage
TBAS16,LM
Toshiba Semiconductor and Storage
LCMXO1200E-3T100C
Lattice Semiconductor Corporation
MPF300TS-1FCG484I
Microsemi Corporation
EP1S20F672C6
Intel
EPF10K100ABI600-2
Intel
EP3C25F256A7N
Intel
5SGXMA4K2F40C1N
Intel
10CL016ZE144I8G
Intel
5AGXMA3D4F27I3N
Intel
A54SX08A-TQG100
Microsemi Corporation
5CGTFD9C5F23I7N
Intel