Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / GA20JT12-263
Manufacturer Part Number | GA20JT12-263 |
---|---|
Future Part Number | FT-GA20JT12-263 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
GA20JT12-263 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | - |
Technology | SiC (Silicon Carbide Junction Transistor) |
Drain to Source Voltage (Vdss) | 1200V |
Current - Continuous Drain (Id) @ 25°C | 45A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Rds On (Max) @ Id, Vgs | 60 mOhm @ 20A |
Vgs(th) (Max) @ Id | - |
Gate Charge (Qg) (Max) @ Vgs | - |
Vgs (Max) | - |
Input Capacitance (Ciss) (Max) @ Vds | 3091pF @ 800V |
FET Feature | - |
Power Dissipation (Max) | 282W (Tc) |
Operating Temperature | 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D2PAK (7-Lead) |
Package / Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
GA20JT12-263 Weight | Contact Us |
Replacement Part Number | GA20JT12-263-FT |
GP2M004A060PG
Global Power Technologies Group
GP2M004A065PG
Global Power Technologies Group
GP2M005A050PG
Global Power Technologies Group
GP2M005A060PG
Global Power Technologies Group
GP2M005A060PGH
Global Power Technologies Group
GP2M008A060PG
Global Power Technologies Group
GP2M008A060PGH
Global Power Technologies Group
GP1M009A090N
Global Power Technologies Group
GP1M010A080N
Global Power Technologies Group
GP1M016A060N
Global Power Technologies Group
XC7A100T-2FTG256I
Xilinx Inc.
APA450-FGG484A
Microsemi Corporation
10AX032E4F27I3SG
Intel
XC6VHX380T-2FFG1154C
Xilinx Inc.
XC7K325T-L2FBG900I
Xilinx Inc.
LFXP3C-5Q208C
Lattice Semiconductor Corporation
LFXP2-5E-6MN132I
Lattice Semiconductor Corporation
10AX066N4F40I3LG
Intel
EP1AGX35DF780C6
Intel
EP1S40F1020C5N
Intel